Everything about Cree RF

The Relentless Pursuit of Innovation
NEW! 500W & 350W GaN HEMTs.
More power and efficiency in a 50Ω package.
Record breaking performance.
It's always on our radar.
Cree® is always looking for ways to improve inefficient technology.
Our new GaN HEMT devices enable near-instant-on capability
with no warm up, longer detection ranges, longer lifetimes
and improved target discrimination to outperform
TWT-based amplifiers.
NEW! CREE® 30W GaN MMIC HPA
Pump up the power
in your Ku-Band amps
Cree sets the standard for Ku-Band amplifier performance with our higher power, more efficient solution that beats TWT or GaAs technology.

See the specs and learn how Cree can boost your satcom performance.



One GaN HEMT. Endless opportunities for DC-18GHz applications.
Cree GaN HEMT RF devices outperform other technologies and cover more frequency bands per amplifier to lower your capital expenses.
Cree Now Offers a New 200W GaN HEMT for Troposcatter, Satcom and Beyond Line of Sight (BLOS)

RF Components