Cree Expands 50V GaN
HEMT Packaged Family
Cree 50V GaN HEMTs now available in 50-W, 30-W and 100-W in metal flange and and pill package. The unmatched transistors significantly improve the efficiency and bandwidth capabilities of multi-octave-bandwidth amplifiers and a wide range of L- and S-band products.
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One GaN HEMT.
Endless opportunities for
DC – 18-GHz applications.
Cree GaN HEMT RF devices outperform other technologies and cover more frequency bands per amplifier to lower your capital expenses.
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RF