No compromise with Cree GaN RF telecom transistors
High-power performance in a low-cost plastic package for all bands up to 3.8 GHz

Full family of devices, including the industry's first 300-W device operating at 2.7 GHz
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One GaN HEMT.
Endless opportunities for
DC – 18-GHz applications.
Cree GaN HEMT RF devices outperform other technologies and cover more frequency bands per amplifier to lower your capital expenses.
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New-Generation, 50-V
GaN HEMT Products
for L-Band Radar
Internationally Available Satcom GaN MMIC
The CMPA5585025F, Cree's 25-W,
C-band/X-band MMIC,
is now available internationally.
Cree CMPA5585025F

RF