Specifications

Documentation

Specifications

FEATURES:

  • Lambertian radiation pattern
  • Cathode-up design (n-pad up)
  • EZBright LED technology, binned @ 20 mA
    • 450 nm: 24+ mW
    • 460 nm: 24+ mW
    • 470 nm: 21+ mW
    • 527 nm: 8+ mW
  • Low forward voltage (Vf): 3.0 V typical at 20 mA
  • Maximum DC forward current: 50 mA
  • AuSn backside metal for use with conductive adhesives, flux eutectic attach, solder paste & solder preforms
  • 2 kV class 2 ESD rating

Documentation

Application Notes Version Last Updated

-

04 Aug 2017

Data Sheets Version Last Updated

D

11 Jan 2019

Product Ecology Version Last Updated
EZ LED Chips REACh Declaration

EZ1000, EZ290, EZ600, EZ700, EZ900

RE1005072018

12 Sep 2018

EZ LED Chips RoHS Declaration

EZ1000, EZ1012 pbar, EZ1030, EZ1030 G4 AuSn, EZ1050, EZ1050 G4 AuSn, EZ1614, EZ290 - 3uM Bond Pad, EZ290 - 6uM Bond Pad, EZ400, EZ500, EZ600, EZ700, EZ900, EZ950

RS1005112018

07 Jan 2019

Sales Terms Version Last Updated

M

29 Jun 2018