CMPA801B025F

25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier

Cree’s CMPA801B025F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package for optimal electrical and thermal performance.

Features:

  • 8.0 - 11.0 GHz Operation
  • 37 W POUT typical
  • 16 dB Power Gain
  • 36 % Typical PAE
  • 50 Ohm internally matched
  • <0.1 dB Power droop

Applications

Related Documents

Data Sheets Version Last Updated
0.6 30 Oct 2013
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
Sales Terms Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012