CMPA2735075F

75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier

Cree’s CMPA2735075F is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small-footprint, screw-down package.

Features:

  • 27 dB Small Signal Gain
  • 80 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
  • 0.5” x 0.5” Total Product Size

Applications

Related Documents

Data Sheets Version Last Updated
1.2 07 Feb 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
A 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Simon M. Wood, Ulf Andre, Bradley J. Millon, and Jim Milligan

This paper presents the design, development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.
Design 01 Oct 2012