50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched GaN HEMT

Cree’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.


  • 80 W POUT typical
Frequency 7.9 - 9.6 GHz
Typical Power (PSAT) 80 W
Power Gain 10 dB
Typical Power Added Efficiency PAE 55 %
Internal Matching Yes - 50Ω
Power Droop 0.1 dB Maximum
Package Type Flange
Operating Voltage 40 V
Peak Output Power 50 W


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