CGH35240

240-W, 3100 – 3500-MHz, 50-ohm Input/Output-Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGH35240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35240F ideal for 3.1 – 3.5-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Features:

  • 3.1 - 3.5 GHz Operation
  • 240 W Typical Output Power
  • 11.6 dB Power Gain at PIN = 42.0 dBm
  • 57 % Typical Power Added Efficiency
  • 50 Ohm Internally Matched
  • <0.2 dB Pulsed Amplitude Droop

Applications

Related Documents

Data Sheets Version Last Updated
1.2 30 Jun 2014
RF Application Notes Version Last Updated
A 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Yifeng Wu and Primit Parikh

The vacuum tubes used in today's millimeter-wave transmitters face an increasing threat from GaN HEMTs. Cree's Yifang Wu and Primit Parikh are leading the GaN charge with designs that incorporate field plates, iron-doped buffer layers and a thin AIN interlayer to deliver a record power at 30 GHz.
Article 01 Jan 2006
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009