CMPA801B025D

25-W, 8.0 – 11.0-GHz, GaN MMIC Power Amplifier

Cree’s CMP801B025D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Small Signal Gain 28 dB
Typical Power (PSAT) 35 W
Operating Voltage 28 V
Breakdown Voltage High
Temperature Operation High
Size 0.142 x 0.188 x 0.004 in
Package Type Die
Frequency 8.0 - 11.0 GHz
Peak Output Power 25 W

Applications

Related Documents

Data Sheets Version Last Updated
1.0 13 Jun 2014
RF Application Notes Version Last Updated
A 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012