CMPA2735075D

75-W, 2.7 – 3.5-GHz, GaN MMIC Power Amplifier

Cree’s CMPA2735075D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Features:

  • 28 dB Small Signal Gain
  • 80 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
  • Size 0.197 x 0.174 x 0.004 inches

Applications

Related Documents

Data Sheets Version Last Updated
1.1 30 Apr 2012
RF Application Notes Version Last Updated
A 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012