25-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier

Cree’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.


  • 25 dB Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
  • Size 1.00 x 0.385 inches


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by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012