CMPA5585025F

25-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier

Cree’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

Features:

  • 25 dB Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
  • Size 1.00 x 0.385 inches

Applications

Related Documents

Data Sheets Version Last Updated
1.7 12 Mar 2014
RF Product Ecology Version Last Updated
RS4067082013 29 Apr 2014
Sales Terms Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012