CGHV96100F1

100-W, 7.9 to 9.6-GHz, 50-ohm, Input/Output Matched GaN HEMT Power Amplifier

Cree’s CGHV96100F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Features

  • 7.9 - 8.4 GHz Operation
  • 145 W POUT typical
  • 50 W POUT Linear OQPSK
  • >12 dB Power Gain
  • 30 % Typical Linear PAE
  • 50 Ohm Internally Matched
  • <0.3 dB Power Droop

Applications

Related Documents

RF Application Notes Version Last Updated
A 30 Apr 2012
A 30 Apr 2012
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012