CGHV96050F1

50-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output Matched GaN HEMT

Cree’s CGHV96050F1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon orgallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features
  • 7.9 - 8.4 GHz Operation
  • 80 W POUT typical
  • >13 dB Power Gain
  • 33 % Typical Linear PAE
  • 50 Ohm Internally Matched
  • <0.1 dB Power Droop

Applications

Related Documents

Data Sheets Version Last Updated
0.3 23 Sep 2013
RF Application Notes Version Last Updated
A 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
RS4001082013 27 Oct 2014
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011