CGH60030D

30-W, 6.0-GHz, GaN HEMT Die

Cree’s CGH60030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

  • 15 dB Typical Small Signal Gain at 4 GHz
  • 12 dB Typical Small Signal Gain at 6 GHz
  • 30 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 6 GHz Operation
  • High Efficiency

Applications

Related Documents

Data Sheets Version Last Updated
3.1 30 Apr 2012
RF Application Notes Version Last Updated
A 30 Apr 2012
B 07 Aug 2012
C 30 Apr 2012
A 30 Apr 2012
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Sales Terms Version Last Updated
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Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011