CGH60015D

15-W, 6.0-GHz, GaN HEMT Die

Cree’s CGH60015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

  • 15 dB Typical Small Signal Gain at 4 GHz
  • 12 dB Typical Small Signal Gain at 6 GHz
  • 15 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 6 GHz Operation
  • High Efficiency

Applications

Related Documents

Data Sheets Version Last Updated
3.1 30 Apr 2012
RF Application Notes Version Last Updated
A 30 Apr 2012
B 07 Aug 2012
C 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
Product ecology
RS4001112012 09 Nov 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by David Schmelzer and Stephen I. Long

A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB.
Design 12 Nov 2006
by Ellie Cijvat, Kevin Tom, Mike Faulkner, and Henrik Sjöland

This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination.
Design 01 Nov 2007
by William L. Pribble, Jim M Milligan, and Raymond S. Pengelly

Abstract from the 2006 IEEE Topical Workshop on PAs for Wireless Communications (RWS)
Presentation from the 2006 IEEE Radio and Wireless Symposium in San Diego
A class-E power amplifier based on a GaN HEMT cell has been designed and tested.
Design 17 Jan 2006
by William L. Pribble, Jim M Milligan, and Raymond S. Pengelly

Abstract from the 2006 IEEE Topical Workshop on PAs for Wireless Communications (RWS)
Presentation from the 2006 IEEE Radio and Wireless Symposium in San Diego
A class-E power amplifier based on a GaN HEMT cell has been designed and tested.
Design 17 Jan 2006
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Junghwan Moon; Seunghoon Jee; Jungjoon Kim; Jangheon Kim; Bumman Kim

Operational behaviors of the class-F and class-F amplifiers are investigated. For the half-sinusoidal voltage waveform of the class-F amplifier, the amplifier should be operated in the highly saturated region, in which the phase relation between the fundamental and second harmonic currents are out-of-phase. The class-F amplifier can operate at the less saturated region to form a half sinewave current waveform. Therefore, the class-F amplifier has a bifurcated current waveform from the hard saturated operation, but the class-F amplifier operates as a switch at the saturated region for a second harmonic tuned half-sine waveform.
Design 01 Jun 2012
by J. A. García, B. Bedia, R. Merlín, P. Cabral and J. C. Pedro

An experimental procedure is proposed for accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a Class E power amplifier (PA). Based on GaN HEMT technology,...
Design 01 Dec 2007
by Neal Tuffy, Anding Zhu, and Thomas J. Brazil

This work outlines a design approach used for achieving highly efficient power amplification over a wide bandwidth, given narrowband passive harmonic load-pull results at a single center frequency.
Design 01 Jun 2011
Paul Saad; Paolo Colantonio; Junghwan Moon; Luca Piazzon; Franco Giannini; Kristoffer Andersson; Bumman Kim; Christian Fager

This paper presents the design, implementation, and experimental results of a highly efficient concurrent dualband GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic sourcepull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively.
Design 15 Apr 2012
by Paul Saad; Paolo Colantonio, Luca Piazzon; Franco Giannini; Kristoffer Andersson; Christian Fager

In this paper, the design, implementation, and experimental results of a high-efficiency dual-band GaN-HEMT Doherty power amplifier (DPA) are presented. An extensive discussion about the design of the passive structures is presented showing different possible topologies of the dual-band DPA. One of the proposed topologies is used to design a dual-band DPA in hybrid technology for the frequency bands 1.8 and 2.4 GHz with the second efficiency peak at 6-dB output power back-off (OBO).
Design 01 Jun 2012
by Hossein Mashad Nemati, Alan L. Clarke, Steve C. Cripps, Johannes Benedikt, Paul J. Tasker, Christian Fager, Jan Grahn, and Herbert Zirath

In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0.9 GHz and investigated for load- and supply-modulation applications.
Design 01 May 2010
by Junghwan Moon; Jungjoon Kim; Bumman Kim

This paper presents the operation principle of Class-J power amplifiers (PAs) with linear and nonlinear output capacitors (Cout s). The efficiency of a Class-J amplifier is enhanced by the nonlinear capacitance because of the harmonic generation from the nonlinear Cout , especially the second-harmonic voltage component.
Design 04 Nov 2010
by Mustafa Ozen, Christer M. Andersson, Thomas Eriksson Mustafa Acar, Rik Jos, Christian Fager

This paper studies linearity of a 2 GHz, 10 Watt peak output power RF pulse width modulation (RF-PWM) based transmitter. The transmitter incorporates a tunable load network class-E PA as the final output stage. The tunable load network enables dynamic optimization of the class-E along with the duty cycle resulting in high efficiency over a wide range of output power levels. A digital predistiortion based linearization scheme is proposed to enhance the linearity of the transmitter.
Design 01 Oct 2012
by Paul Saad, Luca Piazzon, Paolo Colantonio, Junghwan Moon, Franco Giannini, Kristoffer Andersson, Bumman Kim, and Christian Fager

This paper presents the design of a high peak efficiency dual-band power amplifier (PA) and how it is adopted as basic cell to implement a high average efficiency Doherty PA (DPA), achieving a dual-band/multi-mode and efficient transmitter concurrently operating at 1.8 GHz and 2.4 GHz.
Design 01 Oct 2012
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011