8 W, 6.0 GHz, GaN HEMT Die

Cree’s CGH60008D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

  • 15 dB Typical Small Signal Gain at 4 GHz
  • 12 dB Typical Small Signal Gain at 6 GHz
  • 8 W Typical PSAT @ 28 V Operation
  • 5 W Typical PSAT @ 20 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 6 GHz Operation
  • High Efficiency


Related Documents

Data Sheets Version Last Updated
0.3 30 Apr 2012
RF Application Notes Version Last Updated
A 30 Apr 2012
B 07 Aug 2012
C 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
Product ecology
RS4001112012 09 Nov 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Guolin Sun, Rolf H. Jansen

A comprehensive method of designing a broadband Doherty power amplifier is presented in this paper. The essential limitations of bandwidth extension of a Doherty power amplifier are discussed based on the proposed structure of the Doherty power amplifier, which also takes the output matching networks of both sub-amplifiers into account. The broadband matching is realized by applying the simplified real frequency technique with the desired frequency dependent optimum impedances. GaN transistors were selected to implement the circuit structure.
Design 01 Jan 2012
by José A. García, Reinel Marante, María N. Ruiz

In this paper, the design and performance of class E2 resonant topologies for DC/DC power conversion at Ultra High Frequencies (UHF) are considered. Combining the use of RF GaN HEMT devices, both for the inverter and the synchronous rectifier, with high Q lumped-element terminating networks, peak efficiency values over 70% may be obtained.

Control strategies based on carrier bursting, switching frequency modulation, or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response, when compared to low frequency more traditional switched-mode converters, a class E3 polar transmitter for the EDGE standard has been designed and tested at 770 MHz, offering an average global efficiency over 46% at 4.3 W of output power, through RF-based amplitude and phase constituting branches.
design 01 Dec 2012
by Rocco Giofrè; Paolo Colantonio; Franco Giannini; Luca Piazzon

In this letter, a new output combining network for the implementation of a Doherty Power Amplifier (DPA) is presented. The proposed topology simultaneously allows the active load modulation and the output matching, by adopting more realizable elements than the standard DPA, especially when high output power levels are required. The innovative design approach is demonstrated through a practical prototype realization based on GaN-HEMT devices. Experimental results have shown a 65%–48% efficiency at about 42–36 dBm output power with a gain compression lower than 1.5 dB from 1.95 to 2.25 GHz.
design 01 Jan 2013
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011