CGH40120F

120-W RF Power GaN HEMT

Cree’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.

FEATURES:

  • Up to 2.5 GHz Operation
  • 20 dB Small Signal Gain at 1.0 GHz
  • 15 dB Small Signal Gain at 2.0 GHz
  • 120 W Typical PSAT
  • 70 % Efficiency at PSAT
  • 28 V Operation

Applications

Related Documents

Data Sheets Version Last Updated
2.7 14 Feb 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Junghwan Son, Ildu Kim, Junghwan Moon, Juyeon Lee, Bummam Kim

An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
Design 01 Nov 2011
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan

This article discusses various uses of Cree’s GaN HEMTs (CGH21120, CGH25120, CGH40120) in standard and novel amplifier topologies. It includes the practical use of Cree’s proprietary large signal models.
Article 01 May 2009
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by MHD. Tareq Arnous; Khaled Bathich; Sebastian Preis; Georg Boeck

In this paper, the design, implementation, and experimental results of a 200 W high efficiency broadband GaN HEMT power amplifier (PA) are presented. Power combining was used to combine the outputs of two individual octave bandwidth 100 W power amplifiers. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design band. A systematic approach was applied for the design of wideband output and input matching networks.
Design 01 Oct 2012
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009