CGH40010

by Jorge Moreno Rubio; Jie Fang; Vittorio Camarchia; Roberto Quaglia; Marco Pirola; Giovanni Ghione

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3–3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth.

by Deniz Gezmiş Tas; Osman Ceylan; H. Bülent Yağcı

In this article, an RF power amplifier which has a crucial importance for RF transceivers is designed and implemented. The main aim of the design is making the power amplifier linear at the center frequency 1.8 GHz. Linearity was measured with two tone test and according to the result of the test, the Carrier-to-Intermodulation (C/I) ratio should have been above 30 dB and two fundamental carriers with the 5 MHz space should be at least 1.25 Watt. Also, efficiency was tried to be kept as high as possible.

by Ellie Cijvat, Kevin Tom, Mike Faulkner, and Henrik Sjöland

This paper describes the design, simulation and measurement of a GaN power amplifier suitable for envelope and phase signal combination.

by William L. Pribble, Jim M Milligan, and Raymond S. Pengelly

Abstract from the 2006 IEEE Topical Workshop on PAs for Wireless Communications (RWS)
Presentation from the 2006 IEEE Radio and Wireless Symposium in San Diego
A class-E power amplifier based on a GaN HEMT cell has been designed and tested.

by Philip A. Godoy, SungWon Chung, Taylor W. Barton, David J. Perreault, and Joel L. Dawson

A 1.95-GHz asymmetric multilevel outphasing (AMO) transmitter with class-E GaN power amplifiers (PAs) and discrete supply modulators is presented.

by Moon, Junghwan Son, Juyeon Lee, Jungjoon Kim, Seunghoon Jee, Seungchan Kim, and Bumman Kim

A multimode/multiband envelope tracking (ET) transmitter consisting of a hybrid switching amplifier (HSA) and a broadband saturated power amplifier (PA) is developed across 1.3 to 2.7 GHz.

by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble

by Neal Tuffy; Lei Guan; Anding Zhu; Thomas J Brazil

This paper describes the design approach employed for achieving approximated continuous Class-F power amplifier (PA) modes over wide bandwidths. The importance of the nonlinear device capacitance for wave-shaping the continuous Class-F voltage and current waveforms is highlighted, thus reducing the device sensitivity to second and third harmonic impedance terminations.

by D. Kimball, J. Jeong, C. Hsia, P. Draxler, P. Asbeck, D. Choi, W. Pribble and R. Pengelly

Class E amplifiers offer significant advantages for high efficiency operation, although they have been largely limited to relatively low microwave frequencies and/or low output powers. GaN HFETs are well suited to Class E at high powers and high frequencies, inasmuch as their output capacitance is particularly low for a device with a given output power, and has little voltage dependence.

by Michael Boers

Michael Boers, Ph.D. Student, Wins IEEE MTT-S Power Amplifier Competition, 85% PAE Achieved with Microwave Office and Cree, Inc. GaN HEMT.

by J. A. García, B. Bedia, R. Merlín, P. Cabral and J. C. Pedro

An experimental procedure is proposed for accurately characterizing the Vdd-to-AM and Vdd-to-PM nonlinearities in a Class E power amplifier (PA). Based on GaN HEMT technology,...

by David Yu-Ting Wu, Slim Boumaiza

Research on digital predistortion and advanced transmitters utilizing nonlinear PAs have begun to mitigate the concerns about nonlinearity.

by Zhebin Wang and Chan-Wang Park

This paper presents a novel method by using resonators in both input and output matching networks to design a tri-band GaN HEMT power amplifier. Two parallel resonators in series as one frequency selection element are used for each operation frequency. By applying this frequency selection element in both input and output matching networks constructed with microstrip line, tri-band matching network is realized. With our proposed frequency selection element, we can use the conventional L-type structure to design matching network for three frequencies so that the design analysis procedure is easier. We also propose a new simplified output matching network by using bias line to match the output impedance to reduce the number of resonators. To demonstrate our method, we fabricate a tri-band power amplifier that can work at 1 GHz, 1.5 GHz, and 2.5 GHz concurrently. Experimental results show that the output power is 39.8 dBm, 40.8 dBm, and 39.2 dBm with 56.4%, 58.3%, and 43.4% power added efficiency (PAE) at 1 GHz, 1.5 GHz and 2.5 GHz, respectively.

by Karun Rawat; Fadhel M. Ghannouchi

This paper proposes a design methodology for dual-band Doherty power amplifier (DPA) with performance enhancement using dual-band phase offset lines. In the proposed architecture, 50-Ωdual-band offset lines with arbitrary electric lengths at two frequencies are key components, and a novel analytical design solution has been proposed for their design and implementation.

by Anh Nghiem Xuan and Renato Negra

A new technique for designing concurrent multiband biasing networks for multiband RF power amplifiers is presented. The proposed design technique can theoretically be applied for a large number of frequency bands. The biasing network (BN) is composed of a transmission line and high impedance quaterwave open stubs (QWOS) that are located at appropriate positions along the transmission line. Two tri-band BNs for 1.49 GHz, 2.15 GHz and 2.65 GHz frequencies were designed, fabricated and display very good performance with regard to the input impedance seen looking toward the BNs from the active devices, such as FETs, are approximately open for all three bands.

by S. Lin and A. E. Fathy

A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 43 dBm output power and 63% drain
efficiency has been successfully developed.

by Jingqi Wang, Yingjie Xu, and Xiaowei Zhu

In this paper, a digital predistorted inverse class-F GaN power amplifier with novel PAPR reduction technique, in
which not only peaks but also valleys of signal are clipped to reduce the PAPR as much as possible, is presented.

by Karun Rawat; Mohammad S. Hashmi; Fadhel M. Ghannouchi

The emergence of increasing multifunctionality and high data rate advanced wireless standards, such as WiMAX and LTE-advanced, requires communication systems capable of operating at multiple frequencies simultaneously. This situation has led to scenarios where the radios with the ability to function at several distinct frequencies are required. Seamless transition from one existing standard (e.g., 3G) to upcoming standards (e.g., 4G) with backward compatibility is also a motivating factor for the deployment of multiband radio architectures.

by Bumman Kim, Ildu Kim, Junghwan Moon

A general overview and practical design methods for supply-modulated transmitters are presented. Disadvantages of the conventional EER transmitter are discussed, such as wideband sensitivity, power leakage, and poor PAE.

by Gil Wong Choi, Hyoung Jong Kim, Woong Jae Hwang, Suk Woo Shin, Jin Joo Choi, and Sung Jae Ha

This paper describes the design and fabrication of a highly efficient switching-mode Class-E Doherty power amplifier using gallium nitride (GaN) high electron mobility transistor (HEMT) for S-band radar applications.

by Peter Wright, Aamir Sheikh, Chris Roff, P. J. Tasker and J. Benedikt

Interactive Forum paper from the 2008 International Microwave Symposium (IMS)
Presentation Supplement
This paper investigates the development of an inverse class-F design procedure for obtaining very high efficiency performance at high power levels. RF waveform engineering was used to obtain high efficiency inverse class-F waveforms at the device current-generator plane.

by Troels S. Nielsen, Ulrik R. Madsen, Michael Dieudonné

A complete power amplifier design using new Nonlinear Vector Network Analyzer (NVNA) and X-parameter technologies. A high-power, pulsed Continuous Wave (CW) NVNA setup is presented and harmonic tuning capabilities of the measured X-parameter model is demonstrated using the same setup.

by Moon, Seunghoon Jee, Jungjoon Kim, Junghwan Son, Seungchan Kim, Juyeon Lee, Seokhyeon Kim, and Bumman Kim

The practical operating conditions of class-F-1 amplifier are investigated by analyzing the current and voltage waveform shapings. In the experiment, the saturated amplifier is designed and implemented using Cree GaN HEMT CGH40010 at 2.655 GHz. It provides a power-added efficiency of 73.9% at saturated output power of 41 dBm.

by M. Akmal, V. Carrubba, J. Lees, S. Bensmida, J. Benedikt, K. Morris, M. Beach, J. McGeehan, P. J. Tasker

This paper demonstrates how the linearity performance of a 10W GaN HEMT can be dramatically improved by actively engineering the baseband impedance environment around the device.

by Peter Wright, Jonathan Lees, Johannes Benedikt, Paul J. Tasker, and Steve C. Cripps

The design and implementation of a class-J mode RF power amplifier is described. The experimental results indicate the class-J mode’s potential in achieving high efficiency across extensive bandwidth, while maintaining predistortable levels of linearity.

by Wilfried Demenitroux, Christophe Mazière, Emmanuel Gatard, Stéphane Dellier, Michel Campovecchio and Raymond Quéré

This paper presents a complete validation of the new behavioral model called the multiharmonic Volterra (MHV) model for designing wideband and highly efcient power ampliers with packaged transistors in computer-aided design (CAD) software. The MHV models of 10- and 100-W packaged GaN transistors have been extracted from time-domain load–pull measurements under continuous wave and pulsed modes, respectively.

by F. Fornetti, K.A. Morris, M.A. Beach

The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc.

by Seunghoon Jee; Junghwan Moon; Jungjoon Kim; Junghwan Son; Bumman Kim

The switching behavior of Class-E power amplifiers (PAs) is described. Although the zero voltage switching can be performed properly, the charging process at the switch-off transition cannot be abrupt and the waveform deviates from the ideal shape, degrading the efficiency. For the operation above maximum frequency, the charging process should be even faster but it cannot follow. Moreover, the discharging process is not sufficiently fast and further degrades the efficiency. The discharging process is assisted by the bifurcated current at saturation. The performance of the Class-E PA above the maximum frequency is enhanced by the nonlinear , which helps to shape the voltage waveform. The bifurcated current itself cannot generate enough of a second-harmonic voltage component to shape the required voltage waveform. The performance of the Class-E PA can be further improved by a second-harmonic tuning and a conjugate matched output load, leading to the saturated PA. Compared with the Class-E PA, the saturated amplifier delivers higher output power and efficiency. A highly efficient saturated amplifier is designed using a Cree GaN HEMT CGH40010 device at 3.5 GHz. It provides a drain efficiency of 75.8% at a saturated power of 40.2 dBm (10.5 W).

by M. Akmal, J. Lees, S. Bensmida, S. Woodington, V. Carrubba, S. Cripps, J. Benedikt, K. Morris, M. Beach, McGeehan and P. J. Tasker

This paper demonstrates the significant effect of baseband impedance termination on the linearity performance of
a 10W GaN HEMT device driven to deliver a peak envelope power of approximately 40dBm.

by Jialin Cai; Thomas J. Brazil

As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design.