CMPA2560025D

25-W, 2.5 – 6.0-GHz, GaN MMIC Power Amplifier

Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Operating Voltage 28 V
Peak Output Power 25 W
Frequency 2.5 - 6.0 GHz
Package Type Die
Small Signal Gain 24 dB
Typical Power (PSAT) 25 W
Breakdown Voltage High
Temperature Operation High
Size 0.180 x 0.145 x 0.004 in

Applications

Related Documents

Data Sheets Version Last Updated
1.3 13 Sep 2012
RF Application Notes Version Last Updated
A 30 Apr 2012
A 30 Apr 2012
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012