CGHV27200

200-W, 2500 – 2700-MHz, GaN HEMT for LTE

Cree’s CGHV27200 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV27200 ideal for 2.5 – 2.7-GHz LTE and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.

Features

  • 2.5 – 2.7 GHz operation
  • 16-dB gain
  • -37 dBc ACLR at 40-W PAVE
  • 29% efficiency at 40-W PAVE
  • High degree of DPD correction can be applied

Applications

Related Documents

Data Sheets Version Last Updated
0.4 15 Jan 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated