200-W, 2500 – 2700-MHz, GaN HEMT for LTE

Cree’s CGHV27200 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV27200 ideal for 2.5 – 2.7-GHz LTE and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.


  • 2.5 – 2.7 GHz operation
  • 16-dB gain
  • -37 dBc ACLR at 40-W PAVE
  • 29% efficiency at 40-W PAVE
  • High degree of DPD correction can be applied


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