100-W, 2500 – 2700-MHz, 50-V, GaN HEMT for LTE

Cree’s CGHV27100 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 – 2.7-GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.


  • High degree of DPD correction can be applied
Frequency 2.5 - 2.7 GHz
Gain 18 dB
ACLR -37 dBc @ 25 W PAVE
Efficiency 33 % @ 25 W PAVE
Package Type Flange/Pill
Operating Voltage 50 V
Peak Output Power 100 W


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This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows
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