CGHV27100

100-W, 2500 – 2700-MHz, 50-V, GaN HEMT for LTE

Cree’s CGHV27100 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 – 2.7-GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.

Features

  • 2.5 – 2.7 GHz operation
  • 18-dB gain
  • -37 dBc ACLR at 25-W PAVE
  • 33% efficiency at 25-W PAVE
  • High degree of DPD correction can be applied

Applications

Related Documents

Data Sheets Version Last Updated
0.2 15 Jan 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows
the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Design 12 Dec 2014