CGHV22200

200-W, 1800 – 2200 MHz, GaN HEMT for LTE

Cree’s CGHV22200 is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200 ideal for 1.8 – 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.

Features

  • 1.8 – 2.2 GHz operation
  • 18-dB gain
  • -35 dBc ACLR at 50-W PAVE
  • 31 – 35% efficiency at 50-W PAVE
  • High degree of DPD correction can be applied

Applications