CGHV22100

100-W, 1800 – 2200-MHz, GaN HEMT for LTE

Cree’s CGHV22100 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV22100 ideal for 1.8 – 2.2-GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.

Features

  • 1.8 – 2.2 GHz operation
  • 20-dB gain
  • -35 dBc ACLR at 50-W PAVE
  • 31 – 35% efficiency at 50-W PAVE
  • High degree of DPD correction can be applied

Applications

Related Documents

Data Sheets Version Last Updated
1.1 15 Jan 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated