30-W, 5500 – 5800-MHz, 28-V, GaN HEMT for WiMAX

Cree’s CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5 – 5.8-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 – 5.5-GHz applications as well.


  • 300 MHz Instantaneous Bandwidth
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
  • Designed for Multi-carrier DOCSIS Applications
Operating Voltage 28 V
Peak Output Power 30 W
Frequency DC - 6.0 GHz
Package Type Flange/Pill
Small Signal Gain 10 dB
Average Power (PAVE) 4.0 W @ < 2.0% EVM
Efficiency 25 % @ 4 W PAVE


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