Cree’s CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5 – 5.8-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment, the CGH55030F1/CGH55030P1 is suitable for 4.9 – 5.5-GHz applications as well.
- 300 MHz Instantaneous Bandwidth
- Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
- Designed for Multi-carrier DOCSIS Applications