CGH55015F1/P1

15-W, 5500 – 5800-MHz, GaN HEMT for WiMAX

Cree’s CGH55015F1/CGH55015P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5 – 5.8-GHz WiMAX and linear amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment, the CGH55015F1/CGH55015P1 is suitable for 4.9 – 5.5-GHz applications as well.

Features:

  • 5.5 - 5.8 GHz Operation
  • 15 W Peak Power Capability
  • >10.5 dB Small Signal Gain
  • 2 W PAVE < 2.0 % EVM
  • 25 % Efficiency at 2 W Average Power
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
  • Designed for Multi-carrier DOCSIS Applications

Applications

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This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows
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by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
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Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Bradley J. Millon, Simon M. Wood, Raymond S. Pengelly

2.5 and 5-watt average power (15 and 30-watt peak power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the 5.5 to 5.8-GHz band.
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COM DEV EUROPE has developed a low-cost and lightweight S-Band TT&C transponder, for Low Earth Orbit (LEO) missions. The design is based on Commercial Off-The-Shelf (COTS) components and targets earth observation missions with short mission durations of 3-5 years. To enable the customer to access low cost launch vehicles, the STC-MS01 has been designed free of any components that have US ITAR restrictions. The TT&C transponder is based on a Software-Defined–Radio (SDR) architecture. This makes the unit very flexible and easily adaptable to new mission requirements.
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This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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