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CGH55015F1/P1

15 W, 5500-5800 MHz, GaN HEMT for WiMAX

Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages. Based on appropriate external match adjustment, the CGH55015F1/ CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.

Features:

  • 5.5 - 5.8 GHz Operation
  • 15 W Peak Power Capability
  • >10.5 dB Small Signal Gain
  • 2 W PAVE < 2.0 % EVM
  • 25 % Efficiency at 2 W Average Power
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
  • Designed for Multi-carrier DOCSIS Applications

Applications

Related Documents

Data Sheets Version Last Updated
CGH55015F1/P1
3.3 30 Apr 2012
RF Application Notes Version Last Updated
GaN HEMT Biasing Circuit with Temperature Compensation
B 07 Aug 2012
Guide for Soldering Packaged Transistors
A 30 Apr 2012
Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model
C 30 Apr 2012
Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors
A 30 Apr 2012
Sales Terms Version Last Updated
Sales Terms & Conditions
S-parameter Version Last Updated
CGH55015F1/P1 S-parameters, VDS = 28 V, IDQ = 115 mA
Technical Papers & Articles Version Last Updated
A Review of GaN on SiC HEMTs and MMICs
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
Application of Non Linear Models in a range of challenging GaN HEMT Power Amplifier Designs
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications
by Bradley J. Millon, Simon M. Wood, Raymond S. Pengelly

2.5 and 5-watt average power (15 and 30-watt peak power) GaN HEMT amplifiers for WiMAX signal protocols have been designed and fabricated for use in the 5.5 to 5.8-GHz band.
Design 27 Oct 2008
Miniature TT&C Module for Small Satellites in Low Earth Orbits
by G. Roeper; R. Goldsmith; I. Hatziathanasiou; C. McLaren; P.Maguire

COM DEV EUROPE has developed a low-cost and lightweight S-Band TT&C transponder, for Low Earth Orbit (LEO) missions. The design is based on Commercial Off-The-Shelf (COTS) components and targets earth observation missions with short mission durations of 3-5 years. To enable the customer to access low cost launch vehicles, the STC-MS01 has been designed free of any components that have US ITAR restrictions. The TT&C transponder is based on a Software-Defined–Radio (SDR) architecture. This makes the unit very flexible and easily adaptable to new mission requirements.
Design 01 Sep 2010
Reliability of GaN/AlGaN HEMT MMIC Technology on 100-mm 4H-SiC
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
Thermal Analysis and its application to High Power GaN HEMT Amplifiers
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009
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