CGH35060F1/P1

60-W, 3300 – 3900-MHz, 28-V, GaN HEMT for WiMAX

Cree’s CGH35060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35060F ideal for 3.3 – 3.9-GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Features:

  • 3.3 - 3.9 GHz Operation
  • 60 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0 % EVM
  • 25 % Drain Efficiency at 8 W PAVE
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA

Applications

Related Documents

Data Sheets Version Last Updated
2.0 11 Nov 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
RS4001082013 27 Oct 2014
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows
the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Design 12 Dec 2014
by L. Cabria, P. M. Cabral, J. C. Pedro, and J. A. García

This paper describes the design of a class E PA destined to be used as the final stage of a polar transmitter under IEEE 802.16e Mobile WiMAX signal excitation. Based on a 60 W GaN HEMT device, the load condition for optimum efficiency is set close to the maximum value of the power generating function for an OFDMA modulating signal.
Design 01 Feb 2010
by Junghwan Moon, Young Yun Woo, Bummam Kim

A novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level.
Design 01 Sep 2009
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009