CGH35015

15-W, 3300 – 3900-MHz, 28-V, GaN HEMT for WiMAX

Cree’s CGH35015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35015 ideal for 3.3 – 3.9-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.

Features:

  • 3.3 - 3.9 GHz Operation
  • 15 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 2.0 W PAVE at < 2.0 % EVM
  • 26 % Efficiency at 2 W Average Power
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA

Applications

Related Documents

Data Sheets Version Last Updated
3.2 30 Apr 2012
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by John W. Palmour

As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption.
Design 12 Nov 2006
by S. Wood, P. Smith, W. Pribble, R. Pengelly, and J. Crescenzi

An article in High Frequency Electronics about the use of Cree's GaN HEMTs for WiMAX applications.
Article 01 May 2006
by U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, and E. J. Crescenzi

An article in High Frequency Electronics about the recent advances in the use of Cree's GaN HEMTs for WiMAX applications.
Article 01 Jun 2007
by Woo Lee, Sang-Ho Kam, and Yoon-Ha Jeong

This paper describes a new three-stage Doherty power amplifier (DPA) with an adaptive driving amplifier inserted at the input of the carrier cell.
Design 01 Jun 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009
by R. Marante, J. A. García, L. Cabria, T. Aballo, P. M. Cabral, and J. C. Pedro

Two vector nonlinear characterization procedures are presented, aimed at improving available GaN HEMT models for an accurate reproduction of the device behavior operating as a current source and in switched-mode RF PAs.
Design 01 May 2010
by Abdullah AlMuhaisen, Peter Wright, J. Lees, P. J. Tasker, Steve C. Cripps and J. Benedikt

This paper introduces a novel approach for the realization of wide band (>octave) high-efficiency (>95%) high Power Amplifiers (PAs).
Design 01 May 2010
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by R. Marante, L. Cabria, P. Cabral, J. C. Pedro, and J. A. García

In this paper, the impact of self heating on the linearity of a drain modulated GaN HEMT power amplifier (PA) is studied.
Design 01 Apr 2010
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009