CGH27060

8-W (average), 28-V, GaN HEMT for linear communications ranging from VHF to 3 GHz

Cree’s CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.

Features:

  • VHF – 3.0-GHz operation
  • 8-W average power under 802.16
  • 14-dB small signal gain
  • 8.0-W PAVE at < 2.0% EVM
  • 27% drain efficiency at 8-W average power
  • WiMAX fixed-access 802.16-2004 OFDM
  • WiMAX mobile-access 802.16e OFDMA

Applications

Related Documents

Data Sheets Version Last Updated
4.2 30 Jun 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Junghwan Son, Ildu Kim, Junghwan Moon, Juyeon Lee, Bummam Kim

An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
Design 01 Nov 2011
by Junghwan Moon, Young Yun Woo, Bummam Kim

A novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level.
Design 01 Sep 2009
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Bumman Kim, Ildu Kim, Junghwan Moon

This article describes the design of a GaN Doherty power amplifier with digital pre-distortion as well as hybrid envelop elimination and restoration / envelop tracking technique (H-EER/ET).
Article 01 Aug 2010
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by David Yu-Ting Wu, Farouk Mkadem, Slim Boumaiza

Abstract — A comprehensive approach for designing broadband and highly efficient power amplifier based on optimal impedance analysis and simplified real frequency technique SRFT) is presented.
Design 01 May 2010
by Junghwan Moon, Jangheon Kim, Jungjoon Kim, Ildu Kim, Bummam Kim

This paper presents an approach to mitigating the knee voltage effect of the Doherty power amplifier (PA), especially on the carrier amplifier.
Design 01 Jan 2011
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009