8-W (average), 28-V, GaN HEMT for linear communications ranging from VHF to 3 GHz

Cree’s CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.


  • VHF – 3.0-GHz operation
  • 8-W average power under 802.16
  • 14-dB small signal gain
  • 8.0-W PAVE at < 2.0% EVM
  • 27% drain efficiency at 8-W average power
  • WiMAX fixed-access 802.16-2004 OFDM
  • WiMAX mobile-access 802.16e OFDMA


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by Junghwan Son, Ildu Kim, Junghwan Moon, Juyeon Lee, Bummam Kim

An asymmetric Doherty Power Amplifier (ADPA) is introduced using a new output combining circuit for easy of implementation with a large matching tolerance. The proposed APDA has been implemented using GaN HEMT devices at 2.6 GHz for WiMAX signal with 5MHz bandwidth and 8.3 dB peak to average power ratio.
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A novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level.
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by Bumman Kim, Ildu Kim, Junghwan Moon

This article describes the design of a GaN Doherty power amplifier with digital pre-distortion as well as hybrid envelop elimination and restoration / envelop tracking technique (H-EER/ET).
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by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
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by David Yu-Ting Wu, Farouk Mkadem, Slim Boumaiza

Abstract — A comprehensive approach for designing broadband and highly efficient power amplifier based on optimal impedance analysis and simplified real frequency technique SRFT) is presented.
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This paper presents an approach to mitigating the knee voltage effect of the Doherty power amplifier (PA), especially on the carrier amplifier.
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by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
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