CGH27030

30-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

Cree’s CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27030 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.

Features:

  • VHF - 3.0 GHz Operation
  • 30 W Peak Power Capability
  • 15 dB Small Signal Gain
  • 4.0 W PAVE at < 2.0 % EVM
  • 28 % Drain Efficiency at 4 W Average Power
  • WiMAX Fixed Access 802.16-2004 OFDM
  • WiMAX Mobile Access 802.16e OFDMA

Applications

Related Documents

Data Sheets Version Last Updated
3.7 30 Jun 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Ray Pengelly, Simon Wood, Jim Crescenzi

This article describes a WiMAX power amplifier, which achieves high performance using the latest device technologies and design techniques.
Article 01 Dec 2008
by Marco J. Pelk, W. C. Edmund Neo, John R. Gajadharsing, Raymond S. Pengelly, Leo C. N. de Vreede

A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented.
Design 15 May 2008
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009