CGH27015

15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

Cree’s CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.

Features:

  • VHF - 3.0 GHz Operation
  • 15 W Peak Power Capability
  • 14.5 dB Small Signal Gain
  • 2 W PAVE < 2.0 % EVM
  • 28 % Efficiency at 2 W Average Power
  • Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
  • Designed for WiMAX Mobile Access 802.16e OFDMA Applications

Applications

Related Documents

Data Sheets Version Last Updated
3.2 30 Jun 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Junghwan Moon, Junghwan Son, Jungjoon Kim, Ildu Kim, Seunghoon Jee, Young Yun Woo, and Bumman Kim

A Doherty amplifier assisted by a supply modulator is presented using 2.14 GHz GaN HEMT saturated power amplifier (PA). A novel envelope shaping method is applied for high power-added efficiency (PAE) over a broad output power range.
Design 01 May 2010
by Bumman Kim, Ildu Kim, Junghwan Moon

A general overview and practical design methods for supply-modulated transmitters are presented. Disadvantages of the conventional EER transmitter are discussed, such as wideband sensitivity, power leakage, and poor PAE.
Article 01 Aug 2010
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009