CGH21120F

120-W, 1800 – 2300-MHz, GaN HEMT for WCDMA, LTE, WiMAX

Cree’s CGH21120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH21120F ideal for 1.8 – 2.3-GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Features:

  • 1.8 - 2.3 GHz Operation
  • 15 dB Gain
  • -35 dBc ACLR at 20 W PAVE
  • 35 % Efficiency at 20 W PAVE
  • High Degree of DPD Correction Can be Applied

Applications

Related Documents

Data Sheets Version Last Updated
2.3 30 Jun 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
RS4001082013 27 Oct 2014
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan

This article discusses various uses of Cree’s GaN HEMTs (CGH21120, CGH25120, CGH40120) in standard and novel amplifier topologies. It includes the practical use of Cree’s proprietary large signal models.
Article 01 May 2009
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by Simon Wood, Ray Pengelly, Don Farrell, and Carl Platis, Cree, Inc., and Jim Crescenzi, Central Coast Microwave Design

New GaN HEMT devices allow the design of high power amplifiers with the desired linearity and efficiency for 4G applications such as WiMAX, UMTS and WCDMA.
Article 01 May 2009
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009