CGHV1J006D

6-W, 18.0-GHz, GaN HEMT Die

Cree’s CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.

Features

  • 17 dB Typ. Small Signal Gain at 10 GHz
  • 60% Typ. PAE at 10 GHz
  • 6 W Typical Psat
  • 40 V Operation
  • Up to 18 GHz Operation

Applications

Related Documents

Data Sheets Version Last Updated
0.5 12 Jun 2012
RF Application Notes Version Last Updated
A 30 Apr 2012
B 07 Aug 2012
C 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
Product ecology
RS4001112012 09 Nov 2012
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008