6-W, 18.0-GHz, GaN HEMT Die

Cree’s CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate, using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency, high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.


  • 17 dB Typ. Small Signal Gain at 10 GHz
  • 60% Typ. PAE at 10 GHz
  • 6 W Typical Psat
  • 40 V Operation
  • Up to 18 GHz Operation


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