The new 50-V bare die for 20-W, 40-W, 75-W, 170-W and 320-W operate up to 6 GHz and are perfect drivers for 50-V IM FETs.
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Cree Releases Two 50-V Broadband GaN HEMTs
The new 30-W CGHV40030 and 100-W CGHV40100 significantly improve the efficiency and bandwidth capabilities of multi-octave-bandwidth amplifiers and a wide range of L- and S-band products.
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No compromise with Cree GaN RF telecom transistors
High-power performance in a low-cost plastic package for all bands up to 3.8 GHz

Full family of devices, including the industry's first 300-W device operating at 2.7 GHz
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One GaN HEMT.
Endless opportunities for
DC – 18-GHz applications.
Cree GaN HEMT RF devices outperform other technologies and cover more frequency bands per amplifier to lower your capital expenses.
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