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Wireless Devices

Cree is a leading supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices for wireless communications. Typical applications include

• 2-Way, Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear Amplifiers Suitable with OFDM, W CDMA, Edge, CDMA Wave Forms

Cree wireless devices are especially well-suited for high-power communications because of the material we use, silicon carbide (SiC).

SiC has several intrinsic advantages that enable broadband amplifiers for UHF, L Band and S Band applications. These properties include

• High thermal conductivity
• High breakdown electric field
• High saturated electron drift velocity
• High power density (power per unit gate periphery)

These features make SiC MESFET an attractive power FET for multi-octave to decade bandwidth power amplifiers.

Click here to learn more about Cree Wireless products.

• 3/4/2008
  Digi-Key Corporation Now Stocking SiC RF Power MESFETs from Cree
• 8/28/2007
  Cree SiC MESFETs Cut Size, Boost Performance of New MILMEGA UHF Amplifiers
• 6/5/2007
  New GaN HEMTs from Cree Increase Power and Efficiency in WiMAX Applications
• 6/5/2007
  Cree and AWR Offer GaN MMIC Process Design Kit for Microwave Office Design Suite
• 6/4/2007
  Cree Announces Performance and Packaging Breakthroughs for New Broadband GaN HEMTs