• SiC MESFET Products
• GaN HEMTs for General-Purpose
• GaN HEMTs for 3G, LTE and WiMAX
• GaN HEMTs for C-Band &
  S-Band
• GaN HEMT MMICs
• MMIC Foundry Services
• RF Documentation
• Sample Request Form

RF Products

Cree is a leading supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices for RF communications. Typical applications include

• 2-Way, Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear Amplifiers Suitable with OFDM, W CDMA, Edge, CDMA Wave Forms

Cree RF devices are especially well-suited for high-power communications because of the material we use, silicon carbide (SiC).

SiC has several intrinsic advantages that enable broadband amplifiers for UHF, L Band and S Band applications. These properties include

• High thermal conductivity
• High breakdown electric field
• High saturated electron drift velocity
• High power density (power per unit gate periphery)

These features make SiC MESFET an attractive power FET for multi-octave to decade bandwidth power amplifiers.

Click here to learn more about Cree RF products.

• 1/12/2010
  Cree Announces New GaN HEMT MMIC Power Amplifier
• 1/12/2010
  Cree Announces Sample Availability of Two New GaN HEMT Transistors
• 8/18/2009
  Designs Featuring Cree GaN HEMT Sweep Competition at 2009 IEEE/MTT-S International Microwave Symposium
• 6/8/2009
  Cree Demonstrates 120-Watt and 180-Watt High-Efficiency GaN HEMT Amplifiers
• 6/8/2009
  Cree Demonstrates Record Efficiency GaN HEMT Doherty Amplifier with Digital Pre-distortion