• Power Documentation

Z-Rec™ 1700-V, 10-A & 25-A, Silicon Carbide Schottky Diode

Cree announces the world’s first commercially available 1700-V silicon carbide Schottky diodes

NEW PERFORMANCE STANDARD

The Cree 1700-V SiC power devices are setting a new standard for performance as they replace less energy-efficient silicon solutions. Cree's new 1700-V Schottky diodes

• virtually eliminate diode switching losses (up to 99%) in the power-conversion electronics
• improve overall system energy-efficiency, reliability and longevity
• reduce overall system size, weight and cost

APPLICATIONS

• variable-speed motor drives
• power converters in wind energy systems
• train, tram or electric-vehicle power converters

FEATURES

• Zero Reverse Recovery
  • Virtually eliminate diode switching losses
  • Significantly reduce IGBT turn ON losses
  • Greatly reduce overall system losses
  • Much Improved EMI
  • Significantly reduce cooling requirements and improve reliability
  
  
• Positive Temperature Co-efficient
  • Easily paralleled
  • Enables significant benefits for higher power applications
    
    
• Higher potential switching speed
  • Reduce magnetic & filter volume/weight by 40% to 50% by increasing system FSW

KEY SPECFICATIONS

The 1700-V JBS represents a leap forward for high-voltage power systems designers since silicon carbide’s advantage over silicon increases in magnitude as blocking voltage increases.

PROVEN PARTNER / PROVEN TECHNOLOGY:  Cree leads the industry in SiC power devices. Cree SiC 600-V and 1200-V Schottky diodes have been enabling energy-efficiency in data-center and photovoltaic energy generation applications since 2003.

PURCHASE SAMPLES
of Cree's 1700-V Schottky diodes
from Digi-Key

1700-V 10 A & 25 A products are currently available in chip form

CPW3-1700-S010B 10 A	CPW3-1700-S025B 25 A
1700 V Z-Rec™ Silicon Carbide Schottky Diode Chip	1700 V Z-Rec™ Silicon Carbide Schottky Diode Chip