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Cree pushes the envelope in semiconductor materials technology. We provide substrates and epitaxy materials to manufacturers and researchers around the world.
Applications for Cree’s SiC and GaN technology include
SiC is the foremost semiconductor material for a variety of high-performance electronic devices due to its critical physical and electronic properties. (Learn more about the physical and electronic properties of SiC.) Cree is the leading innovator in III nitride epitaxy, which, like SiC, provides many advantages in the manufacture of advanced electronic and optoelectronic devices. (Learn more about Cree's III nitride epitaxy technology.) You can read about Cree product specifications and technology in the Materials Documentation section. To find out how to take advantage of Cree’s materials expertise, contact us at MaterialsSales@cree.com. |
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Cree has unparalleled expertise working with two high-performance
materials, silicon carbide (SiC) and gallium nitride
(GaN).  |
