|
 |
Press Room
Kansai Electric and Cree Demonstrate
a 100 kVA Silicon Carbide Three Phase Inverter
DURHAM, NC, JANUARY 25, 2006 — Cree,
Inc. (NASDAQ: CREE) and Kansai Electric
Power Company of Osaka, Japan, have successfully demonstrated
a 110 kVA silicon carbide (SiC) three-phase inverter.
This represents the highest power SiC inverter reported
to date and represents nine times higher output power
than the previous high of 12 kVA demonstrated by KEPCO
and Cree in 2004. Cree fabricated the SiC power
devices and Kansai Electric (KEPCO) constructed the SiC
modules and inverter using these devices, as a part of
the collaborative eight-year effort funded by KEPCO.
These inverters could eventually reduce conversion losses
by more than 50 percent compared to existing silicon
(Si) inverters.
An inverter is used in a variety
of applications to convert power from DC to AC or for
changing the operating frequency in variable-speed
motor drives. Applications include heat pumps, industrial
motors, and electric vehicles. Inverters
are also used to transfer power onto the grid from battery,
wind and solar sources.
“In the future, a tremendous amount of energy
savings could be realized in industry by switching from
Si inverters to SiC inverters because the power loss
of the inverters is estimated to be reduced by more than
50 percent,” comments Dr. Yoshitaka Sugawara, executive
researcher and manager of the SiC program at KEPCO. “Kansai
Electric plans on further increasing the power capability
of these inverters in order to apply them to a variety
of power systems.”
“We are advancing SiC power device technology
through a variety of improvements ranging from lower
defect density crystal growth to improved epitaxial processes,
device design and processing,” states Dr. John
Palmour, Cree’s executive vice president of advanced
devices. “While more development is required, these
improvements are moving the technology closer to the
point where a significant reduction in the need for new
power plants and reduction in greenhouse gas emissions
are possible.”
The SiC switching device developed
for this inverter is a 4.5 kV, 100 A design called
the SiC Commutated Gate Turn-off Thyristor (SiCGT),
jointly developed by Cree and KEPCO. The chip
size is 8mm x 8mm, enabled by a significant reduction
in crystalline defect densities. This
switch, which can turn off or on in less than 2 microseconds,
has a 10 times higher switching speed than that of an
equivalently rated silicon Gate Turn-off Thyristor (GTO).
This device does not require a snubber circuit, a commonly
used protective circuit for GTOs, thus reducing the part
count and heat dissipation.
A SiCGT module was then developed
that utilizes one SiCGT and one 6mm x 6mm SiC PiN diode
in a metal can package. The module can operate at higher
temperatures (300°C) than conventional silicon modules
(125°C),
by utilizing a new high-temperature resin, “Nanotec-resin
KA100,” for dielectric insulation. Using
six of these modules, the three-phase Pulse Width Modulation
(PWM) inverter demonstrated an output power of about
110 kVA. The PWM frequency was 2 kHz.
About Kansai Electric Power Company
One
of Japan’s largest electric
utilities, the Kansai Electric Power Company (KEPCO)
provides electricity to 13 million customers in Japan's
Kansai region. The utility has a generating capacity
of nearly 35,000 MW, which is produced at more than
160 hydroelectric, fossil-fueled, and nuclear power
plants. As deregulation takes effect, KEPCO is moving
into new business arenas, including retail natural
gas sales in Japan. Additionally, KEPCO is engaged
in information technology, telecommunications, construction
and engineering services, environmental services, home
security, real estate, transportation leasing, and other
energy-related operations. The company was established
in 1951.
About Cree, Inc.
Cree is a market-leading
innovator and manufacturer of semiconductors and devices
that enhance the value of solid-state lighting, power
and communications products by significantly increasing
their energy performance and efficiency. Key to Cree’s
market advantage is its world-class materials expertise
in silicon carbide (SiC) and gallium nitride (GaN)
for chips and packaged devices that can handle more
power in a smaller space while producing less heat
than other available technologies, materials and products.
Cree drives its increased performance technology into
multiple applications including exciting alternatives
in brighter and more tunable light for general illumination,
backlighting for more vivid displays, optimized power
management for high-current switch-mode power supplies
and variable speed motors, and more effective wireless
infrastructure for data and voice communications. Cree
customers range from innovative lighting fixtures makers
to defense related federal agencies.
Cree’s product families include
blue and green LED chips, lighting LEDs, LED backlighting
solutions, power switching devices and radio frequency/wireless
devices. For additional product specifications please
refer to www.cree.com.
This press release contains forward-looking
statements involving risks and uncertainties, both
known and unknown, that may cause actual results to
differ materially from those indicated. Actual
results may differ materially due to a number of factors,
such as the risk we may be unable to develop and release
commercial products with acceptable performance and
reliability for the applications; the risk we will
be unable to manufacture the products with sufficiently
low cost to offer them at competitive prices or with
acceptable margins; the rapid development of new technology
and competing products that may impair demand or render
our products obsolete; the potential lack of customer
acceptance for the products; and other factors discussed
in Cree’s filings with the Securities
and Exchange Commission, including its report on Form
10-K for the year ended June 26, 2005, and subsequent
reports filed with the Commission.
Cree and the Cree logo are registered trademarks of
Cree, Inc.
Contact:
Deb Lovig
Marketing Communications
Cree, Inc.
(P) 919-287-7505
email: deb_lovig@cree.com
|