1.2-kV, 100-A, Silicon Carbide, 50-mm, Half-Bridge Module

Not recommended for new designs. Replacement part: CAS120M12BM2


  • Enables compact and lightweight systems
  • High-efficiency operation
  • Mitigate over-voltage protection
  • Ease of transistor gate control
  • Reduces thermal requirements
Module Size 87.5 x 50 mm
Configuration Half-bridge
Blocking voltage 1200
Current Rating 105 A
RDS (on) 16 mΩ
Maximum Case Temperature 125 °C
Switching Energy ESW 3.5 mJ (Tj = 150°C)
Reverse Recovery Charge QRR 1.6 µC (Tj = 150°C)
Recommended for New Designs No
Package Module
Total Capacitive Charge (QC (typ)) 1.6 nC
View gate driver boards.

Related Documents

Data Sheets Version Last Updated
EOL 24 Mar 2015
Modules Product Ecology Version Last Updated
REACh and RoHS Declarations
A 04 Apr 2014
Power Application Notes Version Last Updated
A 10 Jun 2013
- 01 Jun 2013
Sales Terms Version Last Updated