1.2-kV, 100-A, Silicon Carbide, 50-mm, Half-Bridge Module


  • Enables compact and lightweight systems
  • High-efficiency operation
  • Mitigate over-voltage protection
  • Ease of transistor gate control
  • Reduces thermal requirements

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Module size 50 mm x 87.5 mm
Configuration Half-bridge
Blocking voltage 1200 V
Current rating 105 A (TC < 100C)
RDS(ON) 16 mΩ
Maximum case temperature 125°C
ESW 3.5 mJ  (Tj = 150°C)
QRR 1.6 µC (Tj = 150°C)