New 1700V/50A Schottky diode raises the bar for
high-power SiC rectifiers
Reduces complexity and increases power capability
    in power modules
Ideal for wind power and traction applications
Also available in 650V/1200V versions
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Cree SiC Power Z-FET®
1Ω 1700V, SiC MOSFETs
Increase system efficiency and reliablity while reducing cooling requirements.

Ideal for auxiliary power supplies in inverter-based systems.
Get higher-performing, more-reliable and lower-cost power-conversion systems
Industry’s first all-SiC, three-phase, power module utilizes Cree’s 2nd-generation SiC MOSFETs. Available for immediate purchase.
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Cree SiC MOSFETs power Delta's latest solar inverters
"The SiC MOSFETs from Cree were essential for us to realize our goals for new, high-power inverters that are lightweight and have industry-leading efficiency."

Mr. Klaus Gremmelspacher, Delta Energy Systems
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Achieve twice the
amps per dollar with
second-generation
Z-FET®SiC MOSFETs
Enables systems to have
higher efficiency and smaller size
at a price comparable with silicon
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Power

Cree is the world’s leading manufacturer of silicon-carbide Schottky diodes and MOSFETs for efficient power conversion. These devices provide increased efficiency, higher switching frequency and reduced system size and weight in a variety of applications, including power supplies and solar inverters.