June 19, 2012

Cree Releases Verilog-A RF Device Models to Accelerate GaN Adoption in 4G/LTE Telecom Infrastructure

New Models Drive Faster Time to Market and Provide Rapid Simulation of Complex Waveforms such as W-CDMA and OFDMA
DURHAM, NC -- Cree, Inc. (Nasdaq: CREE) announces the release of a new suite of Verilog-A proprietary non-linear device models for its GaN RF devices, developed for use with leading RF design platforms from Agilent ADS and AWR Microwave Office. The new device models support more complex circuit simulations including modulation envelope analysis for use in the latest innovative broadband and multi-mode RF power amplifiers for 4G cellular telecommunications. The cross-platform models will be available on the Cree Model portal in connection with the upcoming 2012 IEEE International Microwave Symposium to be held June 19 - 21 in Montreal, Canada.

“The release of this new suite of device models enables RF design engineers to predict non-linear performance using harmonic balance, conduct robust transient analysis as well as use ‘real-world’ arbitrary modulation signals with envelope simulation for Cree’s GaN HEMT devices,” said Jim Milligan, director RF and microwave, Cree. “The Verilog-A models, together with envelope simulators, allow designers to directly investigate higher efficiency circuit approaches, such as Doherty amplifiers, to improve adjacent channel power ratios, spectral re-growth and error vector magnitude, while assessing if amplifier performance meets spectral mask requirements for LTE deployments. As these models also take advantage of multi-core processors, simulation times can be greatly reduced.”

“Transient analysis allows insight into switched-mode power amplifier configurations that may also be driven directly from digital signals,” said Ray Pengelly, RF business development manager, Cree. “Combined with such approaches as Chireix out-phasing, unprecedented efficiencies of greater than 70 percent have been demonstrated.”

The models are available free to Cree’s RF customers. Visit Cree at the 2012 International Microwave Symposium, Booth #2125, to see the latest Cree innovations. To request access to Cree's RF model portal, please visit http://www.cree.com/rf/tools-and-support/rf-portal-access-request-form. For additional information please visit www.cree.com/rf.

Verilog-A is an industry-standard language used to describe transistor behavior for simulation purposes. For additional information, please visit  http://www.verilog.org/verilog-ams/htmlpages/public-docs/lrm/VerilogA/verilog-a-lrm-1-0.pdf

About Cree
Cree is a market-leading innovator of semiconductor products for power and radio-frequency (RF) applications, lighting-class LEDs and LED lighting solutions.

Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices.  Cree products are driving improvements in applications such as general illumination, electronic signs and signals, power supplies and solar inverters.

For additional product and company information, please refer to www.cree.com.

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including customer acceptance of products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 26, 2011, and subsequent filings.