Specifications

Documentation

Specifications

FEATURES:

20-mA version:

  • Rectangular LED RF performance
    • 450 & 460 nm: 36 mW min.
  • Epoxy die attach
  • Low forward voltage: 2.95 V typical at 20 mA
  • 1000-V ESD threshold rating
  • InGaN junction on thermally conductive SiC substrate

50-mA version:

  • Rectangular LED RF performance
    • 450 & 460 nm: 76 mW min.
  • Epoxy die attach
  • Low forward voltage: 3.2 V typical at 50 mA
  • 1000-V ESD threshold rating
  • InGaN junction on thermally conductive SiC substrate

Documentation

Data Sheets Version Last Updated

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Sales Terms Version Last Updated