Specifications

Documentation

Specifications

FEATURES:

  • Rectangular LED RF performance
    • 450 nm: 16+ mW
    • 460 nm: 16+ mW
    • 470 nm: 14+ mW
  • Epoxy die attach
  • Low forward voltage: 3.3 V typ @ 20 mA
  • 1-kV ESD rating, 2-kV optional
  • InGaN junction on thermally conductive SiC substrate
  • Also available with DW & VF binned @ 5 mA

Documentation

Data Sheets Version Last Updated

A

28 Nov 2014

Sales Terms Version Last Updated