Cree’s XThin® LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000-V ESD.
Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required.