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SiC & GaN MMIC Foundry Services

Silicon Carbide (SiC) MESFETs and GaN-based HEMTs

Cree's next scheduled Shared Multi-Project fabrication service begins in October.

For additional information, contact Cree at WirelessSales@cree.com.

Cree’s SiC MESFET and GaN HEMT MMIC processes are available for MMIC development using standard full-wafer (SFW) service or a shared multi-project (SMP) “pizza mask” fabrication service. Customers can design into the foundry using ADS or MWO design kits or have Cree perform the design service. Both processes feature

• High power density (4-6 watts/mm) transistors
• Slot vias
• High reliability up to 175-225ºC operating channel temperatures
• Scalable unit cells (1 to 8 mm/Cell)

The value of such MMICs is more power bandwidth and higher efficiency within a smaller footprint compared to other MMIC technologies.

Read the Foundry Services brochure.

• 12/17/2008
  Cree Announces Sample Release of New, Highly-Efficient 120-watt GaN HEMT Microwave Transistor
• 6/13/2008
  Cree Delivers GaN Process Design Kit for Use with Agilent�s Advanced Design System EDA Software�Shortens MMIC Design Cycles
• 6/12/2008
  Cree Announces First Commercially Available GaN RF MMIC Products and Multi-Project MMIC Foundry Services
• 6/11/2008
  Cree Announces Sample Release of 90W GaN HEMT with Record Wideband Amplifier Efficiency
• 6/4/2008
  Cree Introduces Industry�s First GaN HEMT Products for Use in 5-GHz WiMAX Applications