Released 200-LPW XLamp MK-R LED
Released XLamp XM-L2 LED
Released first commercially available all-SiC power module
Introduced 50-V GaN HEMT devices
Announced XLamp CXA1507, CXA1512, CXA2520 and CXA2530 LED arrays
Announced XLamp XB-D color LEDs and XM-L multi-color LEDs
Released XLamp XP-E2 LED
Announced 150-mm 4H n-type silicon-carbide epitaxial wafers
Introduced THE EDGE high-output area and flood light LED luminaires
Announced 170 lumen-per-watt prototype LED light bulb
Released XLamp XP-G2 LED
Announced 0.25-um GaN HEMT die product family
Announced 60-W GaN HEMT Psat transistor
Introduced X-band GaN HEMT power transistors
Introduced KR Series of LED luminaires
Released SR Series of LED architectural downlights
Announced family of 50A silicon-carbide (SiC) devices
Announced CS Series of LED linear luminaires
Announced TEMPO 24 LED-luminaire testing
Announced 254-lumen-per-watt LED
Released XLamp MT-G2 LED
Released XSP series of LED street lights
Announced SC3 Technology Platform for LEDs
Released Aeroblades series of luminaires
Released XLamp® XT-E White LED
Released packaged 1700-V SiC Schottky diodes
Released XLamp XB-D LED
Released Screen Master® C4SMT LED
Released LED Module LMH2
Ruud Lighting subsidiary announced 208,000-square-foot facility expansion
Released XLamp XT-E and XM-L High-Voltage LEDs
Launched Cree Services with TEMPO testing for LED-based fixtures
Announced the acquisition of Ruud Lighting, Inc.
Announced commercial availability of XLamp® XT-E Royal Blue LEDs
Announced a prototype LED bulb that exceeds DOE's 21st Century Lamp L Prize requirements
Announced a new family of seven 1200-V Z-Rec™ silicon carbide Schottky diodes
Announced the visit of President Barack Obama
Demonstrated a GaN HEMT MMIC high-power amplifier (HPA) for satellite communication applications
Announced a 1200-V SiC MOSFET
Announced LED Module LMR4
Demonstrated a 231-lumens-per-watt, white, power LED
Announced the release of Screen Master® CLX6A-FKB LEDs
Announced the availability of the CR family of architectural troffers
Announced LED Module LMH6
Announced the release of XLamp XM-L LEDs
Announced the commercial availability of XLamp XM-L LEDs
Announced the commercial availability of XLamp ML-B LEDs
Announced the industry's first commercial 1200-V surface-mount SiC Schottky diode
Announced XLamp MT-G LEDs
Demonstrated an LED-based A-lamp that can meet ENERGY STAR® performance requirements for a 60-watt standard LED replacement bulb
Announced LED Module LMR4
Introduced the industry's first fully qualified commercial silicon carbide power MOSFET
Announced commercial availability of XLamp® XP-E High Efficiency White (HEW) LEDs
Announced new line of Z-Rec™ 650V Junction Barrier Schottky diodes
Released XLamp CXA20 LED arrays
Announced commercial availability of new XLamp XM-L LEDs
Announced commercial availability of XLamp MX-6S and MX-3S LEDs
Announced a new 150-mm LED wafer production facility in Research Triangle Park
Announced commercial availability of XLamp ML-E LEDs
Announced the development of high-quality 150-mm SiC substrates
Announced XLamp MX-3 LEDs
Announced the availability of the company’s six-inch LED downlights through The Home Depot
Announced the beginning of construction on the world’s first all-LED-lighting Habitat for Humanity house
Announced the extension of EasyWhite Technology to its LMR4 LED modules
Announced the release of XLamp MP-L and MC-E EasyWhite LED bins based on a single two-step MacAdams ellipse
Announced a comprehensive, worldwide patent cross-license agreement with Philips
Announced the development of five new GaN HEMT MMIC amplifiers
Announced a three-year, $1.5 million pledge to provide high-efficiency Cree LED downlights for the kitchens in all new Habitat for Humanity homes built in the United States
Announced the LR6-DR1000 downlight
Announced general availability of the CR6 LED downlight
Announced the LR24HE 100 lumens-per-watt troffer fixture
Announced the LBR-30 retrofit lamp
Announced the extension of warranties for LED lighting fixtures to five years
Announced the Z-Rec™ 1700-V Junction Barrier Schottky Diode Series of products
Announced that new XLamp XM LEDs achieve 160 lumens per watt at 350 mA
Announced new product line of LED modules employing Cree TrueWhite® Technology
Hosted Vice President Joe Biden  and Energy Secretary Steven Chu for a company tour and press conference regarding job creation
Released XLamp XP-G LEDs in warm- and neutral-white color temperatures
Announced an R&D result of 208-lumens-per-watt white power LED
Released the XLamp MP-L LED with EasyWhite® Technology
Signed a distribution agreement with Arrow Electronics, Inc.  for SiC power products
Announced the demonstration of the Cree CR6 LED downlight
Acquired semi-insulating silicon-carbide and power-device patent portfolio from Daimler AG
Announced R&D results of 186 lumens per watt for a white power LED
Announced an agreement to purchase a 592,000-square-foot facility in Huizhou, Guangdong Province, China, for chip production
LRP-38 LED light bulbs selected for initial 650-store deployment at Walmart
Announced commercial availability of the XLamp® MX-6 LED
Announced the expansion of its North Carolina manufacturing capacity
Announced the commercial availability of the XLamp® XP-G LED
Announced that the underwriters of its recent public offering of common stock have fully exercised their overallotment option, resulting in the issuance of an additional 1,650,000 shares
Announced public offering of 11,000,000 shares of common stock
Released line of advanced Z-Rec™ silicon-carbide power diodes
Introduced IPx5-rated tri-color LEDs for full-color displays
Demonstrated 120-watt and 180-watt high-efficiency GaN HEMT amplifiers
Announced the first public demonstration of a record 50 percent efficiency Doherty transistor amplifier with digital pre-distortion
Signed a definitive agreement with RFHIC Corporation (Suwon, Korea) to supply GaN-on-SiC transistors to RFHIC for their GaN HEMT amplifier product families
Demonstrated a prototype version of the LR6 LED recessed downlight that consumes just 6.5 W of electricity
Demonstrated 132 lumens-per-watt XLamp XP-G LED
Introduced the LRP-38 LED lamp
Announces industry’s smallest ANSI-compliant warm/neutral LED bins
Awarded ENERGY STAR® qualifications for LR6, LR5 and LR4 LED downlights
Launched the Product Characterization Tool, an interactive LED design tool that simplifies the task of translating nominal LED performance to real-world conditions
Demonstrated a dual-switch, 1200-volt, 100-amp power module featuring all-SiC semiconductors
Announced the sample release of two 120-W, highly efficient GaN HEMT microwave transistors for telecommunication applications such as W-CDMA, LTE and WiMAX
Entered into an exclusive patent license agreement with Mitsubishi Chemical Corporation (MCC) on the sale of GaN substrates
Announced planned installation of more than 4,200 LR24 recessed LED luminaires in Wedge 5 of the Pentagon
Announced the high-volume availability of lighting-class XLamp® XP-E LEDs with output up to 122 lumens
Announced the sample release of a highly efficient 120-watt GaN HEMT microwave transistor for general-purpose military and industrial applications
Announced volume availability of LR24 recessed LED luminaire
Demonstrated 161 lumens per watt from a high-power LED
Announced the release of its new-generation high-brightness 4-mm and 5-mm oval LEDS in blue, green and red
Announced strategic agreement with Zumtobel for LED downlights in Europe
Announced commercial availability of XLamp MC-E LED
Announced XLamp XP-E and XP-C LEDs
Opened engineering center in Shenzhen, China
Announced first commercially available GaN RF MMIC products
Introduced industry’s first GaN HEMT products for 5-GHz WiMAX applications
Announced patent agreement With Toyoda Gosei
Announced volume shipments of LR4 downlights
Announced global availability of LR6 downlights
Acquired LED Lighting Fixtures, Inc.
Launched Cree Solution Provider program
Announced corporate conversion to LED lighting
Announced commercial release of 100-mm, Zero Micropipe SiC substrates
Introduced 8-A, 600-V, Zero Recovery SiC rectifier for computer servers
Achieved 1,000 lumens from a single LED
Announced commercial availability of XLamp LEDs with minimum luminous flux of 100 lumens at 350 mA
Introduced blue XLamp XR-E LEDs
Introduced GaN HEMT for broadband applications
Demonstrated 100-mm, Zero Micropipe SiC substrates
Acquired COTCO Luminant Device Ltd. of Hong Kong
Expanded the XLamp XR-E and XR-C series of LEDs with warm white color temperatures
Introduced the EZBright700 LED power chip
Introduced the XLamp XR-C series of LEDs
Delivered the XLamp XR-E Series LED, the first 160-lumen white power LED
Introduced EZBright1000™ LED power chip for general lighting applications
Introduced 2-amp rectifier for PC power supplies
Demonstrated 400 watts of RF power for GaN S-Band transistors
Demonstrated a 131-lumens/watt white LED
Introduced GaN HEMT for WiMAX power transistors
Introduced the EZR™ LED chip for the EZBright family
Introduced the EZBright™ family of LED chips
Introduced the XR series of XLamp LEDs
Demonstrated a 100-kVA SiC Three Phase Inverter
Introduced 100mm (4”) SiC substrate and epitaxy material
Achieved 70 lumens per watt with XLamp 7090 LED in R&D
Introduced 3-watt XLamp
Introduced SiC MESFETS for WiMAX power amplifiers
Introduced RazerThin 230 LED product
Introduced MegaBright 290 Gen 2 LED Product
Introduced Colorwave™ backlight solution for LCD TVs & monitors
Introduced brighter blue and green XB900™ power LEDs for LCD BL
Achieved 56 lumens from one-watt white XLamp LED in R&D
Achieved standard LED efficiency of 100 lumens/watt in R&D
Announced XLamp 7090
Launched XLamp® LED product line
Launched brighter XThin LED product
Expanded XThin® LED product family
Introduced RazerThin® LED products
Demonstrated 100 mm semi-insulating SiC substrates
Introduced LDMOS products for avionics and radar markets
Introduced MegaBright Plus™ and XBright Plus™ blue LEDs
Introduced second-generation SiC MESFET RF transistor
Released 1200 V SiC Schottky rectifier
Introduced 20-A, 600-V, Zero Recovery® SiC rectifier
Introduced XBright power chip
Introduced green 525 MegaBright LED
Introduced 10-A, 600-V, SiC Schottky rectifier
Demonstrated 108 W at 2 GHz from GaN RF devices
Announced blue laser lifetimes in excess of 1,000 hours
Introduced green 505 MegaBright LED
Introduced XBright® blue LED
Introduced 12 mW UV LEDs
Introduced first SiC Schottky diodes
Introduced 4H and 6H 3-inch SiC wafers
Introduced MegaBright® blue LED
Introduced 3-inch 4H SiC wafers
Demonstrated 32-percent quantum efficiency with near-UV LED
Introduced UltraBright® blue and green LEDs
Announced high-power 10 GHz GaN HEMT
Introduced lower-current InGaN blue and green LEDs
Demonstrated 12.3 kV high-efficiency SiC power rectifier
Demonstrated 4-inch SiC wafer
Introduced 48 V, 10 W SiC MESFET RF device
Introduced InGaN blue and green LEDs
Demonstrated high-power microwave SiC MESFET
Introduced 2-inch SiC wafer
Demonstrated pulsed GaN blue laser at room temperature
Announced reduced micropipe 4 HN SiC wafers
Introduced Nitride-based blue LED
Developed SiC microwave transistors operating up to 12.9 GHz
Introduced brighter version blue LED
Introduced 4H SiC wafer
Initial public offering
Released world’s first commercial SiC wafers
Commercialized first blue LED
Cree founded