CGHV35150

150-W, 2900 – 3500-MHz, 50-V, GaN HEMT for S-Band Radar Systems

Cree’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

Features:

  • Rated power = 150 W @ TCASE = 85°C
  • Operating frequency = 2.9 - 3.5 GHz
  • Transient 100 μsec – 300 μsec @ 20% duty cycle
  • 13.5 dB power gain @ TCASE = 85°C
  • 50% typical drain efficiency @ TCASE = 85°C
  • Input matched
  • <0.3 dB pulsed amplitude droop

Applications

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by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows
the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Design 12 Dec 2014