CGHV35150

150-W, 2900 – 3500-MHz, 50-V, GaN HEMT for S-Band Radar Systems

Cree’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

Features:

  • Rated power = 150 W @ TCASE = 85°C
  • Operating frequency = 2.9 - 3.5 GHz
  • Transient 100 μsec – 300 μsec @ 20% duty cycle
  • 13.5 dB power gain @ TCASE = 85°C
  • 50% typical drain efficiency @ TCASE = 85°C
  • Input matched
  • <0.3 dB pulsed amplitude droop

Applications

Related Documents

Data Sheets Version Last Updated
0.3 15 Jan 2014
Sales Terms Version Last Updated
S-parameter Version Last Updated
PIN = 36 dBm