250-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems

Cree’s CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package.


  • Reference design amplifier 1.2 – 1.4-GHz operation
  • FET tuning range UHF through 1800 MHz
  • 330-W typical output power
  • 18.2-dB power gain
  • 77% typical drain efficiency
  • <0.3-dB pulsed amplitude droop
  • Internally pre-matched on input, unmatched output


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