CGHV14250

250-W, 1200 – 1400-MHz, GaN HEMT for L-Band Radar Systems

Cree’s CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1800 MHz. The package options are ceramic/metal flange and pill package.

Features

  • Reference design amplifier 1.2 – 1.4-GHz operation
  • FET tuning range UHF through 1800 MHz
  • 330-W typical output power
  • 18.2-dB power gain
  • 77% typical drain efficiency
  • <0.3-dB pulsed amplitude droop
  • Internally pre-matched on input, unmatched output

Applications

Related Documents

Data Sheets Version Last Updated
0.3 15 Jan 2014
Sales Terms Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows
the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Design 12 Dec 2014