60-W, 6.0-GHz, GaN HEMT Die

Cree’s CGH60060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

  • 13 dB Typical Small Signal Gain at 4 GHz
  • 12 dB Typical Small Signal Gain at 6 GHz
  • 60 W Typical PSAT
  • 28 V Operation
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 6 GHz Operation
  • High Efficiency


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A power-scalable, efficient and very wideband GaN class-E high-power amplifier is described. The large bandwidth performance is achieved by employing the so-called “class-E with parallel-circuit” loading conditions using a very compact all-lumped element implementation. The fundamental loading is realized by the magnetizing inductance of a novel bondwire-based transformer connected directly at the transistor drain. The PA input and output matching networks are entirely implemented with bondwire inductors and MOS/MIM capacitors.
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Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

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