CGH40045

45-W RF Power GaN HEMT

Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.

FEATURES:

  • Up to 4 GHz Operation
  • 16 dB Small Signal Gain at 2.0 GHz
  • 12 dB Small Signal Gain at 4.0 GHz
  • 55 W Typical PSAT
  • 55 % Efficiency at PSAT
  • 28 V Operation

Applications

Related Documents

Data Sheets Version Last Updated
3.8 30 Jun 2014
RF Application Notes Version Last Updated
B 07 Aug 2012
A 30 Apr 2012
C 30 Apr 2012
A 30 Apr 2012
RF Product Ecology Version Last Updated
RS4001082013 27 Oct 2014
Sales Terms Version Last Updated
S-parameter Version Last Updated
Technical Papers & Articles Version Last Updated
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows
the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Design 12 Dec 2014
by Junghwan Moon, Young Yun Woo, Bummam Kim

A novel design of the Doherty power amplifier (PA) to improve the efficiency at a back-off output power level.
Design 01 Sep 2009
by David Yu-Ting Wu and Slim Boumaiza

A new Doherty amplifier configuration with an intrinsically broadband characteristic is presented based on the synthesis of key ideas derived from the analyses of the load modulation concept and the conventional Doherty amplifier. Important building blocks to implement the proposed Doherty amplifier structure are outlined, which include the quasi-lumped quarter-wave transmission line, as well as the Klopfenstein taper for broadband impedance matching.
Design 01 Oct 2012
by Jangheon Kim, Junghwan Moon, Jungjoon Kim, Slim Boumaiza, and Bumman Kim

A novel design method without requiring the special harmonic termination circuit for a highly efficient power amplifier (PA) is proposed.
Design 01 Sep 2009
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Design 01 Jun 2012
by Bumman Kim, Ildu Kim, Junghwan Moon

This article describes the design of a GaN Doherty power amplifier with digital pre-distortion as well as hybrid envelop elimination and restoration / envelop tracking technique (H-EER/ET).
Article 01 Aug 2010
by Raymond S. Pengelly, Brad Millon, Donald Farrell, Bill Pribble, and Simon Wood

Presentation from the 2008 IEEE MTT-S International Microwave Symposium (IMS) Workshop on Challenges in Model-Based HPA Design

This presentation discusses attributes of GaN HEMTs, Cree GaN HEMT models, design examples (Broadband CW Amplifiers and Linear WiMAX Amplifier), and future model improvements.
Design 16 Jun 2008
by David Yu-Ting Wu, Farouk Mkadem, Slim Boumaiza

Abstract — A comprehensive approach for designing broadband and highly efficient power amplifier based on optimal impedance analysis and simplified real frequency technique SRFT) is presented.
Design 01 May 2010
by Junghwan Moon, Jangheon Kim, Jungjoon Kim, Ildu Kim, Bummam Kim

This paper presents an approach to mitigating the knee voltage effect of the Doherty power amplifier (PA), especially on the carrier amplifier.
Design 01 Jan 2011
by Jangheon Kim: Farouk Mkadem; Slim Boumaiza

This paper proposes a new broadband saturated power amplifier (SPA) with a distributed second harmonic termination supporting multi-band/multi-mode operation. Due to the multiple harmonic terminations, the proposed PA improves the frequency range where the PA can achieve a high efficiency.
Design 01 Sep 2010
by Sebastian Preis; Daniel Gruner; Georg Boeck

The class-B/J mode continuum in power amplifiers (PAs) defined at the current source plane is discussed considering different parasitic elements including C DS as well as the package. Based on this realistic device description the change of the continuous load impedances depending on the reference plane is demonstrated. It is shown that the design flexibility predicted by the continuous mode theory decreases if the transistor package is taken into account. The presented investigations provide the basis for the design of a broadband GaN PA.
Design 01 Jun 2012
by Donald A. Gajewski, Scott Sheppard, Tina McNulty, Jeff B. Barner, Jim Milligan and John Palmour

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Design 01 May 2011
by Ivan Boshnakov, Anna Wood, Simon Taylor

In the world of RF and microwave engineering, the design and development of solid-state amplifiers is a specialty. It has always required many years of specialized engineering experience and a suitable collection of test and measurement equipment. While these will always be necessary, to be successful in the marketplace today, it is also essential to use a combination of specialized and general CAD tools.
Design 01 Apr 2012
by Ivan Boshnakov; Anna Wood; Simon Taylor

In the world of RF and microwave engineering, the design and development of solid-state amplifiers is a specialty. It has always required many years of specialized engineering experience and a suitable collection of test and measurement equipment. While these will always be necessary, to be successful in the marketplace today, it is also essential to use a combination of specialized and general CAD tools.
Design 01 Jul 2012
by Ildu Kim, Jangheon Kim, Junghwan Moon, Jungjoon Kim, and Bumman Kim

Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation, the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
Design 01 Jun 2009
by Khaled Bathic; Georg Boeck

This paper presents the design of a wideband harmonically-tuned Doherty amplifier. The frequency-dependent back-off efficiency degradation was minimized by compensating the effect of the frequency-sensitive impedance inverters over the design band. Suitable choice of device size ratio as well as harmonic load tuning at back-off and maximum power operations were also considered, resulting in superior performance over the targeted design band.
Design 01 Jun 2012