6-W RF Power GaN HEMT, Plastic

Cree’s CGH40006S is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40006S, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3-mm x 3-mm, surface-mount, dual-flat-no-lead package.

Operating Voltage 28 V
Peak Output Power 6 W
Frequency DC - 6.0 GHz
Package Type Surface Mount
Small Signal Gain 13 dB @ 2.0 GHz
11 dB @ 6.0 GHz
Typical Power (PSAT) 8 W @ PIN = 32dBm
Efficiency 65 % @ PIN = 32 dBm
Package Size 3 X 3 mm


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