C2M0025120D

2nd-Generation Z-FET®
25-mΩ, 1200-V, SiC MOSFET

Features 

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • Avalanche ruggedness

pdf "Cree Gen2 MOSFET in 10kW Boost converter for PV inverter and EV applications"

Package TO-247-3
Blocking Voltage 1200 V
Current Rating 60 A
RDS (on) 25 mΩ
Gate charge total 161 nC
Total Switching Energy Loss 1.7 mJ
Maximum junction temperature 150 °C
Lead-frame materials 100% matte, tin solder finish over a copper lead frame

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