May 13, 2015

Cree Redefines the Discrete Power MOSFET Landscape with the Industry’s First 900-V SiC MOSFET

New device performance eclipses incumbent silicon solutions, providing significant system-level performance and cost advantages in a range of high-frequency power-electronics applications
DURHAM, NC -- Cree, Inc. (Nasdaq: CREE) a market leader in silicon carbide (SiC) power products, has introduced its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power-electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

“As a technology leader in SiC power, we’re committed to breaking the performance barriers that really matter to the power conversion design community,” said Dr. Cengiz Balkas, vice president and general manager, Cree Power and RF. “When compared to equivalent silicon MOSFETs, this breakthrough 900-V platform enables a new market for our products by broadening the power range we can address in end systems. Following our 1200-V MOSFETs, which exhibit superior performance to high-voltage IGBTs, we are now able to out-perform lower-voltage superjunction silicon MOSFET technology at 900 V. This platform delivers vastly superior characteristics, thereby providing power designers with the potential to innovate smaller, faster, cooler, and more-efficient power solutions. Without question, it is beyond the reach of anything currently achievable with silicon.”

Built on Cree’s industry-leading SiC planar technology, the new 900-V MOSFET platform expands the product portfolio to address design challenges common to new and evolving application segments in which a higher DC-link-voltage is desirable. The lead product (C3M0065090J) features the lowest on-resistance rating (65 mΩ) of any 900-V MOSFET device currently available on the market. Moreover, in addition to the industry-standard TO247-3 and TO220-3 packages, the new device is also offered in a low-impedance D2Pak-7L surface-mount package with a Kelvin connection to help minimize gate ringing.

Existing 900-V silicon MOSFETs have severe limitations for high-frequency switching circuits due to extremely high switching losses and poor internal body diodes. Further limiting the use of silicon MOSFETs is the RDS(ON) that increases three times over temperature, which causes thermal issues and significant derating. Alternately, Cree’s new 900-V MOSFET technology delivers low RDS(ON) at higher temperatures, enabling a significant size reduction of the thermal-management system.

The C3M0065090J is rated at 900 V/32 A, with an RDS(ON) of 65 mΩ at 25° C. At higher temperature operation (TJ = 150° C), the RDS(ON) is just 90 mΩ. Packaged parts will be stocked through DigiKey and Mouser.

For more information, please visit www.cree.com/power or click on the embedded product number link above to access product data sheets, tools, and support and to find your local distributor.

About Cree
Cree is leading the LED lighting revolution and making energy-wasting traditional lighting technologies obsolete through the use of energy-efficient, mercury-free LED lighting. Cree is a market-leading innovator of lighting-class LEDs, LED lighting, and semiconductor products for power and radio frequency (RF) applications.

Cree’s product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and RF devices. Cree® products are driving improvements in applications such as general illumination, backlighting, electronic signs and signals, power suppliers and solar inverters.

Please refer to www.cree.com for additional product and company information.

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results may differ materially due to a number of factors, including the risk that actual savings and lifetimes will vary from expectations; the risk we may be unable to manufacture these new products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the risk we may encounter delays or other difficulties in ramping up production of our new products; customer acceptance of our products; the rapid development of new technology and competing products that may impair demand or render Cree’s products obsolete; and other factors discussed in Cree’s filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 29, 2014, and subsequent filings.